Boric acid, B 3 crystals form when surface boron oxide adsorbs moisture. XRD profile of Hf B 2 at different deposition temperatures. SEM fracture cross sections of the Hf B 2 films on silicon substrates deposited at (a) 250 ° C (b) 400 ° C (c) 700 ° C. The temperature axis is labeled in centigrade for convenience. The data from the epitaxial film are indicated by the solid square and solid triangle. Log of film growth rate (open squares) and hafnium atomic density from RBS (open triangles) versus inverse absolute temperature. Compositional and structural analyses of the films were carried out in the Center for Microanalysis of Materials, University of Illinois, which is partially supported by the U.S. Note = "Funding Information: The authors are grateful to the National Science Foundation for support of this research under Grant Nos.
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